maximum r atings rating symbol value unit collector?emitter voltage v ceo 40 vdc collector?base voltage v cbo 60 vdc emitter?base voltage v ebo 6.0 vdc collector current ? continuous i c 600 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board, (1) p d 225 mw t a = 25c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 556 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c device marking m mbt4401l t1 = 2x electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage (3) v (br)ceo vdc (i c = 1.0 madc, i b = 0) 40 ? collector?base breakdown voltage v (br)cbo vdc (i c = 0.1 madc, i e = 0) 60 ? emitter?base breakdown voltage v (br)ebo vdc (i e = 0.1 madc, i c = 0) 6.0 ? base cutoff current i bev adc (v ce = 35 vdc, v eb = 0.4 vdc) ? 0.1 collector cutoff current i cex adc (v ce = 35 vdc, v eb = 0.4 vdc) ? 0.1 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. sotC23 3. pulse test: pulse width < 300 s; duty cycle < 2.0%. 2 emitter 3 collector 1 base ? device marking shipping m mbt4401lt1 2x 3000/ tape & reel general purpose t ransistor ordering information compliance with rohs requirements. we declare that the material of product 2012-11 willas electronic corp. mm bt4401lt1
electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics ( 3 ) dc current gain h fe ?? (i c = 0.1 madc, v ce = 1.0 vdc) 20 ?? (i c = 1.0 madc, v ce = 1.0 vdc) 40 ?? (i c = 10 madc, v ce = 1.0 vdc) 80 ?? (i c = 150 madc, v ce = 1.0 vdc) 100 300 (i c = 500 madc, v ce = 2.0 vdc) 40 ?? collector?emitter saturation voltage v ce(sat) vdc (i c = 150 madc, i b = 15 madc) ?? 0.4 (i c = 500 madc, i b = 50 madc) ?? 0.75 base?emitter saturation voltage v be(sat) vdc (i c = 150 madc, i b = 15 madc) 0.75 0.95 (i c = 500 madc, i b = 50 madc) ?? 1.2 smallCsignal characteristics current?gain ? bandwidth product f t mhz (i c = 20 madc, v ce = 10vdc, f = 100 mhz) 250 ?? collector?base capacitance c cb pf (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) ?? 6.5 emitter?base capacitance c eb pf (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) ?? 30 input impedance h ie k ? (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) 1.0 15 voltage feedback ratio h re x 10 ?4 (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) 0.1 8.0 small?signal current gain h fe ? (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) 40 500 output admittance h oe mhos (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) 1.0 30 switching characteristics delay time (v cc = 30 vdc, v eb = 2.0 vdc t d ?1 5 rise time i c = 150 madc, i b1 = 15 madc) t r ?2 0n s storage time (v cc = 30 vdc, i c = 150 madc t s ? 225 ns fall time i b1 = i b2 = 15 madc) t f ?3 0 figure 1. turnCon time scope rise time < 4.0ns *total shunt capacitance of test jig connectors, and oscilloscope 1.0 k? +30 v 200 ? c s *< 10 pf 1.0 k? +30 v 200 ? c s * < 10 pf 1n916 + 16 v ?14 v < 20 ns <2.0 ns ? 2.0v + 16 v figure 2. turnCoff time 1.0 to 100 s, duty cycle = 2% switching time equivalent test circuits 0 0 1.0 to 100 s, duty cycle = 2% ? 4.0 v 3. pulse test: pulse width < 300 s; duty cycle < 2.0%. 2012-11 willas electronic corp. general purpose transistor mm bt4401lt1
transient characteristics i c , collector current (ma) figure 4. charge data reverse voltage (volts) figure 3. capacitance v cc = 30 v i c / i b = 10 q t t j = 25c t j = 100c c obo c cb q a 10 20 30 50 70 100 200 300 500 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 30 20 10 7.0 5.0 3.0 2.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 q, charge (pc) capacitance (pf) t , time (ns) t , rise time (ns) v cc = 30v i c /i b =10 t r @v cc =30v t r @v cc =10v t d @v eb =2.0v t d @v eb =0v i c /i b = 10 10 20 30 50 70 100 200 300 500 100 70 50 30 20 10 7.0 5.0 10 20 30 50 70 100 200 300 500 100 70 50 30 20 10 7.0 5.0 t r t f i c , collector current (ma) figure 6. rise and fall time i c , collector current (ma) figure 5. turnCon time i c , collector current (ma) figure 8. fall time t f , fall time (ns) v cc = 30 v i b1 = i b2 10 20 30 50 70 100 200 300 500 100 70 5050 30 20 10 7.0 5.0 i c /i b = 10 i c /i b = 20 i c , collector current (ma) figure 7. storage time t f , storage time (ns) t s ? = t s ? 1/8 t f i b1 = i b2 i c /i b = 10 to 20 10 20 30 50 70 100 200 300 500 300 200 100 70 50 30 2012-11 willas electronic corp. general purpose transistor mm bt4401lt1
lmbt4401lt1 unit 1 lmbt4401lt1 unit 2 h re , voltage feedback ratio (x 10 ?4 ) h parameters (v ce = 10 vdc, f = 1.0 khz, t a = 25c) this group of graphs illustrates the relationship between h fe and other ?h? parameters for this series of ransistors. to obtain these curves, a high?gain and a low?gain unit were selected from the lmbt4401 lt1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. i c , collector current (ma) figure 1 1. current gain i c , collector current (ma) figure 13. v oltage feedback ratio h fe , current gain 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 300 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 i c , collector current (ma) figure 12. input impedance h ie , input impedance ( k?) 50 20 10 5.0 2.0 1.0 0.5 i c , collector current (ma) figure 14. output admittance h oe , output admittance ( mhos) 100 50 20 10 5.0 2.0 1.0 smallCsignal characteristics noise figure v ce = 10 vdc, t a = 25c bandwidth = 1.0 hz nf, noise figure (db) 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 lmbt4401lt1 unit 1 lmbt4401lt1 unit 2 lmbt4401lt1 unit 1 lmbt4401lt1 unit 2 lmbt4401lt1 unit 1 lmbt4401lt1 unit 2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 r s , source resistance (k?) figure 10. source resistance effects nf, noise figure (db) f = 1.0 khz 0.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 10 8.0 6.0 4.0 2.0 0 500 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k f , frequency (khz) figure 9. frequency effects i c = 50 a i c = 100 a i c = 500 a i c = 1.0 ma i c = 1.0 ma, r s = 150 ? i c = 500 a, r s = 200 ? i c = 100 a, r s = 2.0 k? i c = 50 a, r s = 4.0 k? r s = optimum rs = source rs = resistance 10 8.0 6.0 4.0 2.0 0 2012-11 willas electronic corp. general purpose transistor mm bt4401lt1
sta tic characteristics i c , collector current (ma) figure 15. dc current gain i b , base current (ma) figure 16. collector saturation region i c , collector current (ma) figure 17. on voltages i c , collector current (ma) figure 18. t emperature coefficients h fe , normalized current gain v ce , collector emitter voltage (volts) i c =1.0 ma t j = 125c v ce = 1.0 v v ce =10 v 25c ?55c 10 ma t j = 25c 100ma 500ma 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 300 500 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.8 0.6 0.4 0.2 0 v, voltage ( volts ) coefficient (mv/ c) t j = 25c vc for v ce(sat) v be(sat) @ i c /i b =10 v ce(sat) @ i c /i b =10 v be @ v ce =1.0 v vb for v be 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 10 0.8 0.6 0.4 0.2 0 +0.5 0 ? 0.5 ?1.0 ?1.5 ?2.0 ? 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 2012-11 willas electronic corp. general purpose transistor mm bt4401lt1
mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot-23 2012-11 willas electronic corp. general purpose transistor mm bt4401lt1 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)
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